Today a two-stage feedback driver amplifier offered in a 3x3mm surface mount QFN package.
Using 0.50 micron gate length GaAs MESFET device model technology, the buffer amplifier covers the 1.5 to 6 GHz frequency bands and achieves a small signal gain of 15 dB, with +15 dBm P1dB across the band. Identified as the CMM9000-QT, this device includes integrated DC blocking capacitors and RF choke inductors on-chip and is fully matched, eliminating the need
for external components. This driver amplifier is well suited for a variety of wireless infrastructure,instrumentation, satellite communications and defense applications.
“The CMM9000-QT compliments our current product line of integrated, self-biased, multi-stage buffer amplifiers and gain blocks covering DC to 20 GHz,” stated Amer Droubi, Product Manager, Mimix Broadband, Inc. “By eliminating the use of any external components, the CMM9000-QT greatly simplifies board design and reduces board area, making application easy and substantially improving time to market.”
Mimix performs 100% RF testing on the device. The chip also has surface passivation to protect and provide rugged parts with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.