Home Trusted by 500,000+ buyers

1 KW peak RF power device LDMOS

Supplier: Richardson Electronics playlist_addCompare

Freescale Announces Industry’s First 1 kW Peak RF Power device in LDMOS technology Designed for Pulsed Industrial, Scientific & Medical applications

Price Guide (Inc GST): POA

Expanding Freescale’s RF Power Portfolio for ISM
Freescale continues commitment to ISM RF Power portfolio
•ISM portfolio introduced June 2006
•Utilized long history of RF experience and innovation
•RF Power amplifier leadership in the cellular infrastructure market
•Hundreds of man-years of RF power experience to develop enhanced VHV6 technology and the ISM portfolio

Industry’s First 1 kW Peak RF PA in 50V LDMOS
MRF6VP11KH Key Features•RF Power transistor designed for pulsed applications •Typical pulsed performance @ 130MHz:
??Pout = 1000 W Peak, 50 V with frequency range of 10 to 150 MHz??Pulse Width —100 µsec??Duty Cycle —20%??Power
Gain —27 dB??Drain Efficiency —65%•Low thermal resistance –?JCmeasured at less than 0.13°C/W•G
reater Negative Gate –Source Voltage range for Improved Class C Operation•Capable of handling 10:1 VSWR @ 50 Vdc•
Designed for push-pull operation•RoHS Compliant•Integrated ESD protection

Key Messages of 1 KW peak RF power device LDMOS:
•Designed in Freescale’s latest 50V LDMOS technology provides:
•27 dB of gain –superior to competing bipolar and MOSFET solutions
•Best-in-class drain efficiency of 65%
•Low thermal resistance –measured at less than 0.13°C/W ?JC
•Reduces system cooling requirements
•Improves reliability, extending MTBF
•Greater Negative Gate –Source Voltage Range for Improved Class C Operation
•Integrated ESD protection
•Provides ease-of-use in manufacturing while maintaining wide voltage swing capability on the gate of -6V to +10V
•Capable of handling 10:1 VSWR @ 50 Vdc
•Designed for push-pull operation
•Combined benefits reduces the number of devices required by up to 70%!
•Results in significant device cost savings, a reduction in boardspace and manufacturing expense
Industry’s First 1 kW Peak RF PA in LDMOS –
MRF6VP11KH1 kW rated unmatched device suitable for pulsed applications with very high output power requirements:Lasers,
MRIs, Plasma Generators, and more!