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DMD series of RF power MOSFETs

Supplier: Richardson Electronics

New packaging technology that provides lower source inductance, at least 3dB more gain, and is BeO-free.

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Thermal resistance also halved if the diamond substrate option is chosen.
Unique Selling Point
Higher gain
Key Features, Benefits & Advantages
These are the primary features/capabilities of this product and the advantages it provides over competing products,
along with the benefit customers receive from it.

Feature  ,  Advantage , Benefit of DMD series of RF power MOSFETs:
1. Lowest thermal resistance Better reliability Better reliability
2. Lower source inductance Higher gain  Higher gain

Only source of BeO-free VDMOS power transistors. These have higher gain than any other VDMOS transistor

Provides at least 3dB more gain, eliminates BeO from package. Available in two versions, the –A version costs no more
than a conventional BeO part but gives higher gain in BeO-free package but no thermal advantage, while the regular
version costs more but has half the thermal resistance.

Applications of DMD series of RF power MOSFETs:
Signal amplification
Military and infrastructure applications such broadcast, jammers, ATC etc.

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