Aethercomm currently has numerous SiC designs covering multi-octave and decade bandwidths. Silicon Carbide amplifiers offer considerably better performance than standard GaAs, LDMOS and VDMOS solutions. Silicon Carbide amplifiers have a maximum junction temperature of 225ºC and this translates into base plate amplifier temperatures of 85ºC with no degradation in MTBF for the active devices. SiC solutions offer better efficiency than other conventional amplifier technologies. Efficiency improvements over octave bandwidths typically average between 10-15% over GaAs, LDMOS and VDMOS. Silicon Carbide amplifiers offer a 3.0 to 5.0 dB improvement in OIP3 with no linearization enhancement. SiC amplifiers also offer better in-band harmonics at P1dB in multi-octave designs. Silicon Carbide amplifiers offer exceptional gain and power over extremely broadbands. Silicon Carbide amplifiers are available today from Aethercomm.
Standard features on all these amplifiers include over-voltage protection, reverse polarity protection, an internal DC-DC converter with filtering and regulation, output infinite impedance protection and high speed DC blanking. Optional features include over-temperature shut-down, forward and reflected power monitoring, linearization, internal gain control, receiver integration, TR module integration and any other option requested by our customers.
The first product in this new product line is called SSPA 0.5-2.0-20. This silicon carbide power amplifier operates from 500MHz to 2000MHz and beyond.