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Super-Rugged VHF Power RF

Supplier: Richardson Electronics

Advanced Power Technology RF, a leading supplier of silicon power transistors for radio frequency(RF) and microwave applications, announces the addition of the ARF475FL to its family of High Voltage, Flangeless packaged, RF Power MOSFETs.


Price Guide: POA

The ARF475FL utilizes a newly-patented process and finer geometry that delivers much higher peak power and RF gain than previous high voltage parts. They operate reliably at DC voltages up to 165 volts. The ARF475FL uses two die, configured for push-pull operation, in the
new T3 Flangeless package and is capable of 1000W pulsed output and 300W CW at up to 150 MHz. High-power, high-voltage RF generators are used extensively for plasma generation, CO2 laser exciters,
medical MRI equipment and a wide variety of HF/VHF communications equipment such as broadband linear amplifiers. To specifically address the needs of these very demanding markets, APT has developed a proprietary ultrahigh voltage wafer fabrication process for making RF power MOSFETs. This doubles the transistor’s available SOA (Safe Operating Area), dramatically improves its resistance to load mismatch, provides superior thermal stability, and significantly enhances the ability to reliably operate in Class AB. The 165 volt DC maximum operating
voltage simplifies output impedance matching circuitry and facilitates integrated assemblies combining DC power supply and RF power amplifier to significantly reduce the size and overall system cost.
The ARF475FL is available in the new flangeless T3 package. This package lowers thermal resistance and cost compared to ceramic packages with a copper tungsten flange. To obtain the high power
dissipation, the backside of the package is lapped to provide an optimum thermal interface surface to mate with the system heat sink. Power cycle results in typical applications have been demonstrated beyond 1 million cycles with a power density of 700 Watts/sq. inch. The coplanar lead arrangement facilitates circuit layout and provides over 2500 volts isolation between any terminal and the mounting surface.
Applications for these devices include MRI, CO2 Laser RF sources and RF Plasma generators up to 150 MHz; as well as broadband linear amplifiers for 1.5 to 60 MHz.

To assist the designer, SPICE models and a data sheet describing the features and benefits of the ARF475FL may be downloaded from APT’s website at or obtained from the factory.

KEY FEATURES of Super-Rugged VHF Power RF:
¨ Up to 1000 Watts Pulsed Output Power
¨ Lower cost flangeless package
¨ Up to 150 MHz Operation
¨ 165 V Operation / 500 V BVDSS
¨ Class AB Capable
¨ Maximized Safe Operating Area (SOA)
¨ High Load Mismatch Tolerance
¨ Superior Thermal Stability


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